utc 2sc5305 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 1 www.unisonic.com.tw qw-r219-003,a high voltage high speed power switching transistor features * high hfe for low base drive requirement * suitable for half bridge light ballast applications * built-in free-wheeling diode makes it specially suitable for light ballast applications * well controlled storage-time spread for all range of hfe to-220f 1 1: base 2: collector 3: emitter *pb-free plating product number: 2sc5305l absolute maximum ratings (t c =25 , unless otherwise noted.) parameter symbol ratings unit collector base voltage v cbo 800 v collector emitter voltage v ceo 400 v emitter base voltage v ebo 12 v collector current (dc) i c 5 a collector current (pulse)* i cp 10 a base current (dc) i b 2 a base current (pulse)* i bp 4 a power dissipation (t c =25 ) p c 75 w junction temperature t j 150 storage temperature t stg -65 ~ 150 thermal characteristics (t c =25 , unless otherwise noted.) parameter symbol ratings unit thermal resistance junction to case junction to ambient r jc r ja 1.65 62.5 /w
utc 2sc5305 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 2 www.unisonic.com.tw qw-r219-003,a electrical characteristics (t c =25 , unless otherwise noted.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = 1ma, i e = 0 800 v collector-emitter breakdown voltage bv ceo i c = 5ma, i b = 0 400 v emitter cut-off current bv ebo i e =1ma, i c =0 12 v collector cut-off current i cbo v cb =500v, i e =0 10 a emitter cut-off current i ebo v eb = 9v, i c = 0 10 a dc current gain h fe1 h fe2 v ce =1v, i c =0.8a v ce =1v,i c =2a 22 8 collector-emitter saturation voltage v ce (sat) i c =0.8a, i b =0.08a i c =2a, i b =0.4a 0.4 0.5 v base-emitter saturation voltage v be (sat) i c =0.8a, i b =0.08a i c =2a, i b =0.4a 1.0 1.0 v output capacitance c ob vcb = 10v, f=1mhz 75 pf turn on time t on 150 ns storage time t stg 2 s fall time t f v cc =300v, i c =2a i b1 = 0.4a, i b2 =-1a r l = 150 ? 0.2 s storage time t stg 2.25 s fall time t f v cc =15v,v z =300v i c = 2a,i b1 = 0.4a i b2 = -0.4a, l c =200h 150 ns diode forward voltage v f i f = 1a i f = 2a 1.5 1.6 v reverse recovery time* (di/dt =10a/s) t rr i f = 0.4a i f = 1a i f = 2a 800 1.4 1.9 ns s s *pulse test : pulse width=5ms, duty cycles Q 10% static characteristic dc current gain 0 0 collector current, i c (a) collector-emitter voltage, v ce (v) 3 7 3 10 5 4 1 9 8 6 5 4 2 1 2 i b = 500ma i b = 450ma i b = 400ma i b = 350ma i b = 300ma i b = 250ma i b = 200ma i b = 150ma i b = 100ma i b = 50ma 0.01 1 dc current gain, h fe collector current, i c (a) 0.1 1 10 10 100 ta = 125 v ce = 1v -25 25 i b = 0
utc 2sc5305 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 3 www.unisonic.com.tw qw-r219-003,a dc current gain collector-emitter saturation voltage base-emitter saturation voltage 0.01 0.01 saturation voltage, v be (sat), v ce (sat) (v) collector current, i c (a) 0.1 1 0.1 10 10 i c = 10 i b v be (sat) 0.01 1 h fe , dc current gain collector current, i c (a) 0.1 1 10 10 100 ta = 125 v ce = 5v -20 25 v ce (sat) 1 collector-emitter saturation voltage base-emitter saturation voltage 0.01 0.1 saturation voltage, v be (sat) (v) collector current, i c (a) 0.1 1 10 10 ta = 125 i c = 5i b 0.01 0.01 saturation voltage, v ce (sat) (v) collector current, i c (a) 0.1 1 0.1 10 100 ta = 125 -20 25 1 1 i c = 5i b 25 -20 switching time collector output capacitance 1 1 capacitance, cob (pf) collector-base voltage, v cb (v) 10 100 1000 0.1 0.01 time, t stg , t f ( s) collector current, i c (a) 1 0.1 10 10 t f t stg 10 1 v cc = 300v i c = 5i b1 = -2.5i b2 100 f = 1mhz
utc 2sc5305 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 4 www.unisonic.com.tw qw-r219-003,a reverse recovery time forward diode voltage 0.01 0.1 forward diode voltage, v f (v) forward diode current, i f (a) 1 10 10 1.0 0.8 reverse recovery time, trr ( s) forward current, i f (a) 1.5 1.0 2.0 1.6 1 1.4 1.2 0.1 safe operating area power derating 10 0.01 collector current, i c (a) collector-emitter voltage, v ce (v) 1000 100 25 0 power dissipation, p c (w) case temperature, t c () 100 20 175 100 1 80 60 100 dc 10 s 1 s 1ms 5ms 10 0.1 40 05075 125 150 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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